| 摘要 |
PURPOSE:To realize a pattern wherein oxide film thickness changes gradually by a method wherein a portion of a substrate where a pattern is formed in an oxide film forming process is selectively exposed to a scanning charged particle beam. CONSTITUTION:A charged particle beam is subjected to control when it is caused to scan an injection region 2 where a pattern is to be formed. For example, the injection quantity per unit area is larger when the scanning speed is decreased or the beam current is increased, and is smaller when the scanning speed is increased or the beam current is decreased. The two parameters are properly selected for a desired quantity of injection into a given portion. This facilitates the process of building a structure wherein oxide film thickness is allowed to change gradually and continually. Use of this method produces a semiconductor device with its performance improved.
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