发明名称 |
Chemical-sensitive semiconductor device |
摘要 |
A chemical-sensitive semiconductor device in the form of a chemical-sensitive field effect transistor, suitable for testing relatively small volumes of a fluid analyte, comprises a substrate provided with a passageway, interconnecting its major surfaces, along which the analyte can pass. Drain and source regions are formed at opposite ends of the passageway and a chemical-sensitive gate region is formed on the sides of the passageway.
|
申请公布号 |
US4764797(A) |
申请公布日期 |
1988.08.16 |
申请号 |
US19860883158 |
申请日期 |
1986.07.08 |
申请人 |
THORN EMI PLC |
发明人 |
SHAW, JOHN E. A.;SIBBALD, ALASTAIR |
分类号 |
H01L29/78;G01N27/28;G01N27/414;(IPC1-7):H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|