发明名称 Chemical-sensitive semiconductor device
摘要 A chemical-sensitive semiconductor device in the form of a chemical-sensitive field effect transistor, suitable for testing relatively small volumes of a fluid analyte, comprises a substrate provided with a passageway, interconnecting its major surfaces, along which the analyte can pass. Drain and source regions are formed at opposite ends of the passageway and a chemical-sensitive gate region is formed on the sides of the passageway.
申请公布号 US4764797(A) 申请公布日期 1988.08.16
申请号 US19860883158 申请日期 1986.07.08
申请人 THORN EMI PLC 发明人 SHAW, JOHN E. A.;SIBBALD, ALASTAIR
分类号 H01L29/78;G01N27/28;G01N27/414;(IPC1-7):H01L29/66 主分类号 H01L29/78
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