发明名称 |
Method of making photoelectric conversion device |
摘要 |
A method of making a photoelectric conversion device with a substrate having an insulating surface, and a plurality n of non-single crystal semiconductor photoelectric conversion elements U1 to Un sequentially formed side by side on the substrate and connected in series one after another, which eliminates leakage between electrodes and attains a high photoelectric conversion efficiency. The active portion of each element U1 to Un is selectively annealed by light irradiation to increase its crystallinity, hence conductivity. The intercell coupling portion has a high resistance to current leakage.
|
申请公布号 |
US4764476(A) |
申请公布日期 |
1988.08.16 |
申请号 |
US19870051287 |
申请日期 |
1987.05.19 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI |
分类号 |
H01L27/142;H01L31/0224;(IPC1-7):H01L31/04 |
主分类号 |
H01L27/142 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|