发明名称 Thin film resistances
摘要 <p>Deposited on a substrate are prepared by production of an ionised plasma, bombardment of a metallic and a non-metallic target by this plasma and depositing the metallic and non-metallic particles produced, on the substrate in the form of a thin film. The substrate is mounted in the interior of a chamber in which there are also a metal (typically nickel-chrome alloy) and non-metal (typically borosilicate glass) target. An ionisable gas (pref. argon) is introduced into the chamber and ionised by means of radio frequency energy, to form a plasma of positive ions. The non-metallic target is bombarded first the plasma and then the metallic mesh target which is placed between the non-metallic target and the substrate. The amount of metallic and non-metallic deposits and thus the resistivity can be controlled by applying to the non-metallic target a varying radio frequency energy and to the metallic target a varying continuous current. The resistance of the film can be controlled to give a required resistance precisely. Thin film coatings thus obtained are useful in micro-circuits.</p>
申请公布号 FR2008121(A1) 申请公布日期 1970.01.16
申请号 FR19690014364 申请日期 1969.05.06
申请人 MONSANTO CY 发明人
分类号 C23C14/28;H01C17/12;H01L49/02;(IPC1-7):01C17/00;05H1/00 主分类号 C23C14/28
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