| 摘要 |
PURPOSE:To make it possible to form a self-alignment contact having excellent flatness by a method wherein the first dielectric film is formed, a resin coating solution having a specific main component is coated on the upper part of the first dielectric element, and the second dielectric film is formed by coating at the low temperature of 500 deg.C or below. CONSTITUTION:The first dielectric film 108 of silicon oxide film is formed on the whole surface using a chemical vapor growth method, and a gate electrode part only is selectively removed in such a manner that it is covered by the first dielectric film 108 by performing anisotropic etching. The coating solution having the material indicated by the formula 'I' as the main component is spin-coated as the second dielectric film 109, a heat treatment is performed thereon at 500 deg.C or below in an oxygen atmosphere, and a coated silicon oxide film is formed. A resist pattern is formed on the coated silicon oxide film as the second dielectric film, and after a source and drain contact through hole has been formed on the second dielectric film 109 by performing anisotropic etching, the coated silicon oxide film is brought into the state of high density as the second dielectric film by performing a heat treatment at 600 deg.C or above. Consequently, the microscopic element having a flat interlayer insulating film and a self-aligned contact through hole can be obtained.
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