发明名称 ELECTRON BEAM LITHOGRAPHY METHOD
摘要 PURPOSE:To make it possible to sharply reduce the period of lithography as well as to contrive improvement in a throughput by a method wherein the lithography is performed by separating data into two parts, namely, one is drawn according to a fundamental address size and the other is drawn according to a line width incremental address size. CONSTITUTION:The pattern 11 containing a line-width increment is divided at least into two parts, lithography is performed twice thereon using an electron beam of dimensions corresponding to the fundamental size AS and the line-width incremental size DELTAAS respectively. The lithography of a line width incremental part 32 in the direction STF of the stage continuous movement is performed at a speed higher than the stage speed corresponding to the electron beam of the dimensions corresponding to the line width incremental dimensions simultaneously using the beam deflection in the stage continuously moving direction STF using the electron beam of dimensions corresponding to the line-width incremental measurements DELTAAS. Consequently, the lithography of the pattern 11 can be performed in a shorter period, and a throughput can also be improved.
申请公布号 JPS63196037(A) 申请公布日期 1988.08.15
申请号 JP19870028990 申请日期 1987.02.10
申请人 TOSHIBA MACH CO LTD 发明人 NUMAGA TAKUOKI
分类号 G09G3/02;H01L21/027;H01L21/30 主分类号 G09G3/02
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