| 摘要 |
PURPOSE:To inexpensively perform a mark indicating the position of a semiconductor chip by transferring the matrix elements of the mark pattern of a second photomask corresponding to the superposed part of first and second photomasks to the chip to form different marks on the respective chips. CONSTITUTION:A first photomask 4 in which mark region designation patterns 5 are formed in row and column directions at the same pitch as that of semiconductor chips 10 is prepared, and a mark pattern 7 is formed as a second photomask 6 having mark patterns arranged in different coordinates in row and column directions at different pitches from those of the chips 10 in such a manner that one of the coordinates is superposed on the mark region designation pattern 5. The coordinates of the pattern 7 corresponding to the superposed section of the patterns 5 and 7 are transferred to the chips 10 to form different marks thereon. Accordingly, two reticles required to form the necessary photomask are sufficient, thereby achieving inexpensively the search of electric characteristic distribution, and malfunction analysis of a semiconductor substrate 1 as well as characteristic analysis. |
