| 摘要 |
PURPOSE:To make it possible to isolate elements for which flat surface can be obtained even when the density of element isolation region is not uniform by a method wherein, after a resist layer has been coated in such a manner that its thickness is uniform on the filled material located on the region other than a groove part and that the resist layer makes a recess on the recessed part on the surface of the filled material of the groove part, and etching is performed in such a manner that its speed on the resist layer is slower than that on the filled material. CONSTITUTION:A filling material 4 is adhered to the whole surface of the semiconductor substrate 1 provided with a groove part 2, and after a resist layer 3 has been coated on the surface of said filling material 4 in such a manner that the surface of the resist layer 3 becomes a recessed form on the groove part 2, the resist layer 3 and the filling material 4 are removed simultaneously under the condition that the removing speed of the resist layer 3 is slower than that of the filling material 4. Consequently, when an element isolation region and the like is formed by filling up the filling material into the groove, the surface of said region can be made flat, and the reliability and the yield of production of a semiconductor integrated circuit can be improved.
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