| 摘要 |
PURPOSE:To provide a firm bonding, excellence in durability and production at a low cost by stacking and using a glass suitable for anode bonding which was formed by sputtering as an intermediate material for the bonding of a semiconductor strain gauage chip with a metal diaphragm for pressure receiving. CONSTITUTION:On the bottom of a semiconductor strain gauge chip 2, a glass material 3 which is suitable for anode bonding and has a proper thermal expansion coefficient close to the thermal expansion coefficient of the chip is thinly stacked by sputtering as an intermediate material, and the semiconductor strain gauge chip 2 on which the thin glass material 3 was stacked is anode-bonded to the side of a metal diaphragm 11 opposed to a medium to be detected (diaphragm surface), which metal diaphragm has substantially similar thermal expansion coefficient to the semiconductor gauge chip and has a sufficient pressure resistance. With this, the glass thin film 3 has an appropriate thermal expansion coefficient value and the bonding strain and thermal stress involved in the bonding can be made small, so the semiconductor strain gauge chip 2 can be bonded to the metal diaphragm 11 firmly and positively, whereby the detection precision can be made high.
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