| 摘要 |
PURPOSE:To increase or reduce specific resistance of a GaAs crystal, by heat- treating GaAs grown at a molar ratio kept within a specific range at a given temperature. CONSTITUTION:A GaAs crystal is grown at 1.02-1.5 molar ratio (As/Ga). The GaAs obtained in the crystal growth step is treated in an atmosphere containing As or an inert gas or vacuum at 700-1,100 deg.C to increase the specific resistance of the GaAs crystal. The GaAs obtained in the afore-mentioned crystal growth step is treated at 450-650 deg.C in the atmosphere similar to those described above to reduce the specific resistance of the GaAs crystal.
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