| 摘要 |
PURPOSE:To inhibit the generation of the nonuniformity of white spots due to the increase of dark currents generated by the depleting of an element isolation region by forming a gate electrode in the element isolation region and a photoelectric converter and shaping a high-concentration impurity layer by self-alignment with the gate electrode in the semiconductor layer. CONSTITUTION:A diffusion layer as a photodiode 18, a diffusion layer as a buried channel 20 in a vertical CCD shift register and a channel stop region 23 are formed onto the main surface of an Si substrate 16 in succession. A signal reading gate 26' and a gate 26 for an element isolation region are shaped. Inter-layer oxide films 28 are formed, and electrodes 27 for vertical CCDs are shaped similarly by polycrystalline Si. Impurity ions having the same conductivity type as the substrate are implanted into a region between the channel stop region 23 and the photodiode 18, using the gate 26 for element isolation and a photo-resist 29 as masks, and a high-concentration impurity layer 30 is shaped. The same process as a normal MOSLSLI is employed subsequently. |
