EINGANGSSCHUTZEINRICHTUNG FUER EINE HALBLEITEREINRICHTUNG

摘要

An input protective apparatus for a semiconductor device (Q3) comprises an MOS transistor (Q4) having a thick gate insulating film formed therein. The MOS transistor (Q4) has one active layer connected to an input terminal (11) through a second resistor element (R2) and connected to a semiconductor device (Q3) to be protected through a first resistor element (R1), and an other active layer connected to a ground terminal. The input protective apparatus is adapted such that a resistance value R1 of a first resistor element (R1) and a resistance value R2 of the second resistor element (R2) satisfy the relation R1>R2, and the on-resistance R3 of the MOS transistor (Q4) and the resistance value R2 satisfy the relation R3<