| 摘要 |
PURPOSE:To reduce the leakage of a signal largely while improving resolution by partitioning a light-receiving section and an impurity layer under the light- receiving section by an insulating isolation region reaching to a semiconductor substrate from the surface of the light-receiving section. CONSTITUTION:A P-type impurity region 2 and an N-type impurity layer as a light-receiving section 3 are formed onto an N-type semiconductor substrate 1 in succession, and these layers are partitioned by P<+> insulating isolation regions 4. That is, the insulating isolation regions 4 demarcate even the P-type impurity layer 2 at the same time as the light-receiving section 3. Consequently, beams are projected to the light-receiving sections 3 and one parts of electrons as minority carriers photoelectric-converted in the P-type impurity layers 2 intend to diffuse in the transverse direction, but they are obstructed by the insulating isolation regions 4 and leakage signals are reduced extremely. This invention can also be realized by properly lowering the concentration of the P-type impurity layers 2 and depleting the regions. |
