| 摘要 |
PURPOSE:To increase the mutual breakdown strength of transfer electrodes, and to improve the yield of products by constituting the transfer electrode by etching an electrode material layer formed in one layer structure. CONSTITUTION:An inter-layer insulating film 15A is grown outside the surface of a semiconductor substrate 7, in the surface of which a light-receiving storage section 8 and a buried type CCD transfer channel 10 are formed, and an electrode material layer 16 is shaped onto the inter-layer insulating film 15A. A resist 17 is applied onto the electrode material layer 16, and a gap 17a is formed through a photo-resist method. The electrode material layer 16 is etched along the gap 17a in the resist 17, and a gap 16a is obtained, and patterned. Consequently, transfer electrodes 19, 21, etc., are formed from the electrode material layer 16. Since the pattern of the electrode material layer 16 is acquired as a pattern approximately equal to the pattern of the resist 17, it is obtained as a pattern in narrow gap width W of approximately 0.8mum. The resist 17 is removed, and an inter-layer insulating film 15B is shaped while an optical shielding layer 5 with an opening section 6 is formed through a conventional method, thus acquiring a solid-state image sensing device.
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