| 摘要 |
<p>A photomask (50) used for form patterns on a resist coated semiconductor wafer is comprised of a light transmissive baseplate (52) having a metallic pattern (54) thereon. A plasma deposited SiO2 conformal, electrically resistive, coating (56) covers the patterned baseplate (52), wherein the coating material is substantially the same refractive index as the baseplate.</p> |
