发明名称 PROCESS FOR OBTAINING THIN-FILM CIRCUITS AND PASSIVE CIRCUIT MADE BY SAID PROCESS
摘要 On a single insulating substrate (1) there are deposited in succession a thin layer of tantalium (2) with high resistivity doped with nitrogen and oxygen, a less thin layer of titanium (3) with low resistivity doped with nitrogen, a layer of palladium (4) and a thick layer of gold (7). Selective chemical attacks of said layers then permit tracing of conducting lines (7), resistive lines with greater resistance (10) and resistive lines with less resistance (13).
申请公布号 EP0256568(A3) 申请公布日期 1988.08.10
申请号 EP19870201179 申请日期 1987.06.19
申请人 SIEMENS TELECOMUNICAZIONI S.P.A. 发明人 FERRARIS, GIAMPIERO;TERSALVI, ANTONIO
分类号 H01L27/01;H01C7/18;H01L21/3205;H01L21/70;H01L21/822;H01L23/52;H01L27/04;H05K1/16;(IPC1-7):H01L21/70 主分类号 H01L27/01
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