发明名称 |
PROCESS FOR OBTAINING THIN-FILM CIRCUITS AND PASSIVE CIRCUIT MADE BY SAID PROCESS |
摘要 |
On a single insulating substrate (1) there are deposited in succession a thin layer of tantalium (2) with high resistivity doped with nitrogen and oxygen, a less thin layer of titanium (3) with low resistivity doped with nitrogen, a layer of palladium (4) and a thick layer of gold (7). Selective chemical attacks of said layers then permit tracing of conducting lines (7), resistive lines with greater resistance (10) and resistive lines with less resistance (13). |
申请公布号 |
EP0256568(A3) |
申请公布日期 |
1988.08.10 |
申请号 |
EP19870201179 |
申请日期 |
1987.06.19 |
申请人 |
SIEMENS TELECOMUNICAZIONI S.P.A. |
发明人 |
FERRARIS, GIAMPIERO;TERSALVI, ANTONIO |
分类号 |
H01L27/01;H01C7/18;H01L21/3205;H01L21/70;H01L21/822;H01L23/52;H01L27/04;H05K1/16;(IPC1-7):H01L21/70 |
主分类号 |
H01L27/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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