发明名称 Semiconductor device comprising an insulating structure and manufacturing process thereof.
摘要 <p>Semiconductor article and preparation thereof is provided a semiconductor article together with a process for producing the same which article has a plurality of semiconductor single crystal regions comprising a semiconductor single crystal region of one electroconductive type and a semiconductor single crystal region of the opposite electroconductive type on the same insulator substrate, at least said semiconductor single crystal region of one electroconductive type being provided by forming a different material which is sufficiently greater in nucleation density than the material of said insualtor substrate and sufficiently fine to the extent that only one single nucleus of the semiconductor material can grow and then permitting the semiconductor material to grow around the single nucleus formed as the center.</p>
申请公布号 EP0277415(A2) 申请公布日期 1988.08.10
申请号 EP19870309856 申请日期 1987.11.06
申请人 CANON KABUSHIKI KAISHA 发明人 ARIKAWA, SHIRO;YONEHARA, TAKAO
分类号 H01L21/20;H01L21/761;H01L21/762;(IPC1-7):H01L21/76 主分类号 H01L21/20
代理机构 代理人
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