| 摘要 |
PURPOSE:To obtain a minute gate pattern having a low resistance, by making it possible to perform a gate forming method utilizing an etching method on GaAs. CONSTITUTION:N-type impurities are doped in a semi-insulating GaAs substrate 7, and an N-GaAs layer 5 is formed. N<+>-GaAs layers 6 and 6 are formed in correspondence with source-drain-electrode forming positions. Source and drain electrodes 1 and 1 having ohmic contacts are formed on the layers 6. A gate pattern is formed between both electrodes 1 and 1 with resist. A gate is formed with aluminum 4, titanium 3 and gold 2. Then a wiring pattern 8 comprising aluminum is formed. Then an opening pattern 9 is formed. Then the device is immersed in electrolyte, and the aluminum is etched for an arbitrary time period. The device is taken out of the electrolyte and washed. Thus the cross section of the gate becomes a T shape. The operating part of the gate is thin, and the gate resistance can be made low.
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