| 摘要 |
PURPOSE:To make it possible to perform thermal oxidation with water vapor obtained by burning hydrogen at low temperature, by independently controlling the temperatures of a heater for burning the oxygen and a heater for the thermal oxidation of the surface of a semiconductor substrate. CONSTITUTION:Hydrogen gas 3, which is introduced through a core pipe 5, is burned in the stream of oxygen gas 4, and water vapor is formed. Thus a semiconductor substrate, which is heated with a heater 2 is oxidized. A heater 1, which can control temperature, is independently provided in addition to the heater 2. Therefore, the temperature of the part, where the hydrogen gas is fired, is independently controlled with respect to the heating of the semiconductor substrate. Then the temperature of the heater 1 is set at the ignition point or higher of the hydrogen and the hydrogen is burned. The temperature of the heater 2 can be set at the lower temperature than that of the heater 1. Thus the thermal oxidation with the water vapor obtained by burning the oxygen at the low temperature can be performed.
|
