| 摘要 |
PURPOSE:To permit formation of a thin film having high adhesiveness on a substrate by providing 1st and 2nd grids between a filament for generating thermions and vapor source and maintaining both the grids at a prescribed potential relation. CONSTITUTION:A material to be evaporated from the vapor source 9 flies toward the substrate 15 and passes the 1st grid 7. While the thermions released from the filament 6 are accelerated by the electric field between the 1st grid 7 and the counter electrode 5, the thermions fly toward the 1st grid 7 and collide against the particles of the material to be evaporated and the introduced gas to ionize the particles. A plasma state is thereby realized in the space near the 1st grid 7. The thermions from the vapor source 9 are absorbed, if the 2nd grid 8 is set at a positive or zero potential at this time. The 2nd grid 8 serves as a barrier for the passage of the thermions from the vapor 9, if said grid is set at the negative potential and the plasma maintains the stable state. The thin film having good crystallinity and orientability and excellent adhesiveness is thereby formed on the substrate 5.
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