| 摘要 |
PURPOSE:To obtain sufficient current density, by growing a first semiconductor device on a substrate, growing first and second buffer layers, growing a second semiconductor device, and forming the low-resistance connection between the semiconductor devices. CONSTITUTION:A first semiconductor device alpha is provided on an n-type GaAs substrate 9. A first buffer layer 8 (p-type InxGa1-xAs: x=0 1), in which n-type impurities or p-type impurities are added, is laminated on the first semiconductor device alpha. In said impurities, the composition is changed so that the forbidden band width continuously decreases in the direction away from the device alpha. A second buffer layer 7 (n-type InyGa1-yAs: y=1 0) is laminated on the buffer layer 8. Impurities, which have a reverse conductivity type to that of the buffer layer 8, are added to the layer 7. The composition of the impurities is changed so that the forbidden band width continuously becomes large in the direction away from the device alpha. A second semiconductor device beta is provided on the buffer layer 7. Thus the low-resistance connection between the semiconductor devices is formed, and sufficient current density is obtained.
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