| 摘要 |
PURPOSE:To measure the characteristics of a wafer in a state of compression stress, which is close to the characteristics after a semiconductor product is completed, by mounting the wafer to be measured on a stage, in the curved surface of which a plurality of minute holes are provided, evacuating air to a vacuum state in the minute holes, and closely contacting the wafer to the stage. CONSTITUTION:A plurality of minute holes 2 are provided in a stage 1 having a concave spherical surface. The minute holes 2 are connected to an exhaust pipe 10 in the inside. The air in the holes are sucked with a vacuum pump, which is connected to the exhaust pipe, to a vacuum state. When a wafer to be measured 3 is mounted on the stage 1, the wafer 3 is curved along the curved surface of the stage 1. In this state probes 4 are contacted with the measuring pads of the wafer 3. The probes are connected in a to a tester through conductor wires 5. Thus the characteristics are measured. In this way, the characteristics of the wafer 3 are measured state of compression stress, which is close to the characteristics when a semiconductor product is completed. |
