| 摘要 |
PURPOSE:To improve the manufacturing yield rate of an integrated circuit device and to improve reliability, by forming barrier metal comprising tungsten nitride in a contact hole in a self-aliginment mode. CONSTITUTION:After an n-type region 2 is formed on the surface layer of a substrate 1, a silicon oxide film 3 is deposited. A contact hole 3a is provided. Tungsten 4 is selectively deposited in the contact hole 3a. Heat treatment is performed in mixed gas of nitrogen and hydrogen at 600 deg.C. A part of tungsten 4' having a specified thickness is made to remain, and the surface layer is nitrided and transformed into tungsten nitride 5. An aluminum wiring 6 is formed. The wiring, at which the barrier layer comprising the tungsten nitride 5 is formed in the contact hole in a self-alignment mode, is obtained. Thus the manufacturing yield rate of a semiconductor circuit device is improved and its reliability is improved.
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