Process for producing devices containing silicon nitride films.

摘要

Silicon nitride regions suitable for applications such as capping layers in integrated circuit fabrication are produced by an advantageous plasma deposition process. This process utilizes a combination of gases, including a silicon-containing gas, a nitrogen-containing gas, a fluorine-containing gas, a hydrogen-containing gas. Silicon nitride having a low density of defect states and thus having excellent dielectric properties is produced.