发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain wiring structure positively conducting electrical connection even by using a fine through-hole by boring the through-hole having a sectional shape, in which the inclination of an upper section is made easier than a lower section, to an insulator layer. CONSTITUTION:Through-holes having a sectional shape in which the inclination of upper sections is made easier than lower sections are formed as through-holes 31, 32, and conductive substances 4 are attached selectively to the lower sections of the through-holes through a selective CVD method. The supply of a reactive gas being re-duced in the through-holes 31, 32 and precipitating the conductive substance 4 is rate-determined by the diffusion of the reactive gas to bottom sections from the opening sections of the through-holes, and the supply of the reactive gas to the bottom sections is accelerated with the increase of the areas of the opening sections of the through-holes 31, 32 and the shallowing of the depth of the holes. Accordingly, when the upper sections of the through-holes 31, 32 are tilted and the areas of the opening sections are increased with approach to the opening sections, the diffusion of the reactive gas is promoted, and the conductive substance 4 can be attached sufficiently into the through-holes even when the diameters of the through-holes are reduced, thus resulting in the difficulty of the disconnection of wirings.
申请公布号 JPS63192248(A) 申请公布日期 1988.08.09
申请号 JP19870025182 申请日期 1987.02.05
申请人 FUJITSU LTD 发明人 HASHIMOTO KOJI;FUSHIMI HIDEKI
分类号 H01L21/3205 主分类号 H01L21/3205
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