| 摘要 |
PURPOSE:To increase reverse surge resistance by equally dividing a P-N main junction region surrounded by a guard ring into a plurality of equal parts while symmetrically arranging the equal parts in a low-noise semiconductor device with guard ring structure. CONSTITUTION:An N type Si substrate 1 is coated with an SiO2 film 4, openings are bored, and boron is diffused to form a P type P-N main junction region 3 and a guard ring region 2 surrounding the region 3. The P-N main junction region 3 is divided into two or four and formed while being symmetrically arranged in the ring region 2 at that time, and a metallic electrode 5 is applied on the region 2 while being opposed to these divided regions 3. Accordingly, when reverse surge voltage is applied, the generation of heat does not concentrate at the center and is dispersed, and reverse surge resistance increases by as much as 10% or more. |
