| 摘要 |
PURPOSE:To utilize the most part of the surface area of a semiconductor for forming capacitors and increase the capacities of the capacitors by a method wherein the capacitors which occupy the most part of the area of the surface region of the substrate are formed vertically and arranged in parallel to each other and the active regions of active elements are formed on the substrate. CONSTITUTION:A plurality of long trenches are provided in the surface region of a silicon semiconductor substrate 4 and impurity diffused regions which are used as the one side electrodes of capacitors are formed around the trenches. A plurality of cell plates 1 which are used as the other side electrodes of the capacitors are formed vertically in the surface region of the substrate 4 in parallel to each other so as to occupy the most part of the area of the surface region and thin insulating films are formed between the substrate 4 and the cell plates 1. As the long capacitors are formed in the most part of the surface region of the substrate 4 in the trench shapes, the capacitances can be increased even if the top plan areas of the capacitors are reduced and, as active regions 2 of active elements are formed on the substrate 4, the integrity can be further improved. |
