发明名称 HEAT TREATMENT FURNACE FOR SEMICONDUCTOR
摘要 PURPOSE:To eliminate previous evaluation at the time of the change of the conditions of treatment and a thermocouple, and to remove the routine exchange and calibration of the thermocouple by detecting reflected beams from a wafer having a luminescent wavelength component in a noncontact manner and obtaining the temperature of a wafer. CONSTITUTION:First and second optical guides 41, 42, which are penetrated to each of heating elements 1 while being arranged brought near to the outer circumference of a core pipe 2, and a light-emitting element and a photodetector mounted at the terminals of the first and second optical guides 41, 42 are installed. The reflected beams of beams emitted toward wafers 5 in the core pipe 2 from the light-emitting elements are received by the second optical guides 42, and the temperatures of the wafers 5 are detected by the magnitudes of outputs acquired by photoelectric-converting reflected beams received by the second optical guides 42 by the photodetectors. Consequently, the temperatures of temperature elements to be measured under a high- temperature atmosphere can be measured in a noncontact manner, and the heating elements are controlled by the temperatures, thus resulting in adaptation to the variation of the conditions of treatment. Accordingly, previous evaluation at the time of the variation of the conditions of treatment is unnecessitated, and a thermocouple need not be exchanged and calibrated routinely in order to ensure accuracy.
申请公布号 JPS63192231(A) 申请公布日期 1988.08.09
申请号 JP19870023938 申请日期 1987.02.04
申请人 MITSUBISHI ELECTRIC CORP 发明人 TSURU YUKINOBU
分类号 H01L21/66;H01L21/22 主分类号 H01L21/66
代理机构 代理人
主权项
地址