| 摘要 |
PURPOSE:To facilitate the positioning of an Al wiring and thus contrive to increase the density of an element by using a poly Si film having a Pt silicide layer on a surface layer so as to cover an aperture part for an electrode. CONSTITUTION:A resist 9 is patterned on the surface of an Si wafer by photolithography so as to cover the aperture part 3 for the emitter electrode, the poly Si film 4 is etched with the resist 9 as the mask, thus removing the resist, and accordingly the poly Si film 4 is so left as to cover the aperture part 3 for the emitter electrode. Next, Pt is adhered approx. 200-400Angstrom uniformly on the poly Si film 4 and the oxide film 2, and then heat-treated. Thereby, Pt silicide reaction is caused, thus changing the surface layer of the poly Si layer 4 into a Pt silicide layer 10. Further, it is removed by means of the unreacted Pt on an oxide film 2. Then, an Al film 5 is adhered about 0.6mum, and a resist pattern 11 is formed thereon. With the resist film 11 as the mask, the Al film 5 is dryly etched with CCl4 gas plasma, and the resist is removed, resulting in the formation of the electrode wiring. |
