| 发明名称 |
Process for forming crystalline films by glow discharge |
| 摘要 |
Crystalline silicon films are formed by exposing a film of amorphous silicon on a substrate to a glow discharge in the presence of an inert gas such as argon. Masks can be used to allow for selective crystallization of defined regions of the amorphous film.
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| 申请公布号 |
US4762803(A) |
申请公布日期 |
1988.08.09 |
| 申请号 |
US19850805879 |
申请日期 |
1985.12.06 |
| 申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
SATO, NORITADA;SEKI, YASUKAZU |
| 分类号 |
H01L31/04;H01L21/20;H01L21/205;(IPC1-7):H01L21/365 |
主分类号 |
H01L31/04 |
| 代理机构 |
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