| 发明名称 |
Process for producing a SiC semiconductor device |
| 摘要 |
A process for producing a SiC semiconductor device comprising growing a single-crystal film of SiC on a single-crystal substrate of Si and forming the structure of semiconductor device such as diodes, transistors, etc., on said SiC single-crystal film, thereby obtaining a SiC semiconductor device on a commercial scale.
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| 申请公布号 |
US4762806(A) |
申请公布日期 |
1988.08.09 |
| 申请号 |
US19840683801 |
申请日期 |
1984.12.19 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
SUZUKI, AKIRA;FURUKAWA, KATSUKI |
| 分类号 |
H01L21/04;H01L29/24;(IPC1-7):H01L29/163;H01L29/04 |
主分类号 |
H01L21/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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