| 摘要 |
PURPOSE:To prevent the contact of a solder bump by mixing the fine powder of a ferromagnetic substance, a Curie temperature of which is higher than the melting point of solder, into the solder bump and joining a semiconductor chip under the state in which a DC magnetic field is applied in the vertical direction to a substrate when the solder bump is melted. CONSTITUTION:In a method in which a solder bump 2' is formed to an electrode section 8 for a semiconductor chip 1, the solder bump 2' is melted and joined with a wiring section on a substrate 3 and the semiconductor chip 1 is mounted onto the substrate 3 with high density, ferromagnetic-substance fine powder 10, a Curie temperature of which is higher than the melting point of solder, is mixed into the solder bump 2', and the semiconductor chip 1 is cemented under the state in which a DC magnetic field is applied in the vertical direction to the substrate 3 when the solder bump 2' is melted. Accordingly, the crushing of the solder bump is reduced comparatively, a short circuit with an adjacent solder bump is minimized, and a self-aligning effect is improved.
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