| 摘要 |
PURPOSE:To increase the number of picture elements effectively without providing fine structure and high density arrangement of a CCD by a method wherein, when a plurality of gate electrodes are biased at a required potential selectively, corresponding light sensing regions are connected to an output diode through inversion layers and optoelectric transducing signals are outputted from corresponding parts of the CCD. CONSTITUTION:An infrared detector 1 is composed of a plurality of gate electrodes 7 which are electrically isolated from each other and define respective light sensing regions individually and an output diode 9 which is provided in common for the respective light sensing regions. If one of the gate electrodes 7 is biased at a required potential, an inversion layer 13, i.e. an opposite conductivity type layer, is formed in a one conductivity type semiconductor substrate surface immediately below the biased gate electrode 7. The opposite conductivity type layer 13 is connected to an opposite conductivity type region 6 of which the diode element 9 is composed and the depletion layers 14 of both the layer 13 and the region 6 are unified. As a result, only the part immediately below the biased gate electrode 7 operates as a light sensing region. Therefore, by applying the bias potential to the respective gate electrodes 7 successively, the parts immediately below the respective gate electrodes 7 can be made to operate as the light sensing regions successively. With this constitution, one infrared detector can be made to operate effectively as a plurality of picture elements. |
