| 摘要 |
PURPOSE:To lower the viscosity of melt and to uniformize the temp. distribution in the interface of crystal growth and to obtain crystal having little concn. fault by growing crystal from melt added with Be of prescribed amount to a raw material consisting of II-VI compds. CONSTITUTION:Melt of a raw material of II-VI compds. consisting of CdSe, CdTe, ZnTe or mixed crystal thereof is prepared and Be is added to this melt. The carrier concn. of Be is regulated to 1X10<13>-5X10<14>/cm<3> and the viscosity of this melt is lowered. Thereafter crystal is grown from this melt.
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