发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To decrease a peak current at the time of sense by dividing a memory cell array provided on intersections of plural word lines and bit lines, respectively, into plural blocks, bringing a sense amplifier of a selected block at every active cycle to a sense end eariliest, and delaying others. CONSTITUTION:RB1-RB6, SA1a, SA1b-SA4a, SA4b, MB1a, MB1b-MB4a, MB4b, CD1-CD4, and RD denote row blocks, sense amplifiers, memory cell array blocks, column decoders, and a row decoder, respectively. In this constitution, for instance, in case of RA1=1, in the block RB4 (the sense amplifiers SA4a, SA4b) of RA8=1, RA9=1, sense amplifier driving signals phiS81a, phiS81b for driving a transistor are both ended quickly as 'H'. On the other hand, at the time of RA8=1 and RA9=0, a signal level to the row block RB2 (the sense amplifiers SA2a, SA2b) is delayed as 'L' and ended.
申请公布号 JPS63191393(A) 申请公布日期 1988.08.08
申请号 JP19870023934 申请日期 1987.02.04
申请人 MITSUBISHI ELECTRIC CORP 发明人 TSUKAMOTO KAZUHIRO;KUMANOTANI MASAKI;KONISHI YASUHIRO;YAMAZAKI HIROYUKI;DOSAKA KATSUMI;IKEDA ISATO;MIYATAKE HIDEJI;SHIMODA MASAKI;HIDAKA HIDETO
分类号 G11C11/409;G11C11/34;G11C11/401;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/409
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