发明名称 METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTAL
摘要 PURPOSE:To inhibit interference of the growth of single crystal which results from scum in a Czochralski method by using a blade fitted concentrically with a pulling-up shaft and purging scum incorporated in a crucible to the vicinity of the wall thereof. CONSTITUTION:In a device for producing single crystal by a Czochralski method, a blade 1 is fitted to a vertically moved shaft 2 concentrically with a pulling-up shaft 4. Before pulling up single crystal 3, scum 5 incorporating on the surface of melt 6 of a raw material or in a liquid sealant 9 is purged to the vicinity of the wall of a crucible 7 by using this blase 1. Further scum is swept away in a wide range over the central part of the crucible 7.
申请公布号 JPS63190794(A) 申请公布日期 1988.08.08
申请号 JP19870023373 申请日期 1987.02.02
申请人 SUMITOMO ELECTRIC IND LTD 发明人 NAKAGAWA MASAHIRO;TADA KOJI;TATSUMI MASAMI
分类号 C30B15/00;C30B27/02 主分类号 C30B15/00
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