发明名称 |
METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTAL |
摘要 |
PURPOSE:To inhibit interference of the growth of single crystal which results from scum in a Czochralski method by using a blade fitted concentrically with a pulling-up shaft and purging scum incorporated in a crucible to the vicinity of the wall thereof. CONSTITUTION:In a device for producing single crystal by a Czochralski method, a blade 1 is fitted to a vertically moved shaft 2 concentrically with a pulling-up shaft 4. Before pulling up single crystal 3, scum 5 incorporating on the surface of melt 6 of a raw material or in a liquid sealant 9 is purged to the vicinity of the wall of a crucible 7 by using this blase 1. Further scum is swept away in a wide range over the central part of the crucible 7.
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申请公布号 |
JPS63190794(A) |
申请公布日期 |
1988.08.08 |
申请号 |
JP19870023373 |
申请日期 |
1987.02.02 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
NAKAGAWA MASAHIRO;TADA KOJI;TATSUMI MASAMI |
分类号 |
C30B15/00;C30B27/02 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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