| 摘要 |
PURPOSE:To realize a photoelectric conversion device with its photocurrent increased and its stability not affected by surface/interface effects by a method wherein a photoconductive semiconductor layer is a laminate built of at least two types of thin films stacked up one upon another alternately. CONSTITUTION:A photoconductive semiconductor layer 34 is so constructed that two thin semiconductor layers 34a and 34b (34a the first thin films and 34b the second) different from each other in optical band gap are stacked up alternately. As for the structure of the photoconductive semiconductor layer 34, first thin films 34a and second thin films 34b are alternately stacked up several times [a (34a/34b)n structure]; or the two types of thin films are stacked up alternately and regularly with the first and last layers both being of the same type (34a/34b...34a/34b/34a); or third-type thin films are sandwiched between them. Any of these designs brings about an increase in a photocurrent, which results in a photoelectric device with its response to light, OFF characteristic in particular, improved. |
