| 摘要 |
PURPOSE:To relieve the stress upon a substrate imposed by a masking material by a method wherein the masking material layers for local oxidation used to cover the specified regions on the semiconductor substrate are formed of silicon nitride, silicon dioxide and silicon nitride respectively for the first, the second and the third layers. CONSTITUTION:Masking material layers 12 for local oxidation are formed on the substrate 10 through the intermediary of silicon dioxide layers 11 to cover the active regions of device as masks while insulating regions are being grown. The silicon dioxide layers 11 are laid between the masking material 12 for local oxidation and the silicon substrate 10 to prevent any defect from developing into the substrate 10. For example, in case the masking material for local oxidation comprises a silicon nitride, the silicon dioxide layers 11 are compressed into the silicon substrate 10 due to the difference in the thermal expansion coefficient while the silicon nitrides 12 are subjected to tension resultantly to protect the substrate 10 by said offsetting force. Through these procedures, the stress upon the substrate 10 can be relieved.
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