| 摘要 |
PURPOSE:To prevent blooming without degradation of photoelectric sensitivity by a method wherein a semiconductor layer with its impurity concentration lower than that of a silicon semiconductor substrate or a semiconductor layer with its conductivity type different from that of the silicon semiconductor substrate is formed on a surface, opposite to the surface provided with an insulating film, of the silicon semiconductor substrate. CONSTITUTION:In a charge transfer device wherein a voltage is applied to a plurality of electrodes 3 built on an insulating film 2 formed on one of the surfaces of a silicon semiconductor substrate 1 for the storage and transfer of charges in the silicon semiconductor substrate 1 just under the insulating film 2, a semiconductor layer 34, different from the silicon semiconductor substrate 1 in the type of conductivity, is provided on the surface of the silicon semiconductor substrate 1 opposite to the surface whereon the insulating film 2 exists. The silicon semiconductor substrate 1 is to be reverse to the semiconductor layer 34 in terms of the bias direction. In this way, a blooming-free charge transfer device capable of a high photoelectric sensitivity is produced with its resolution protected from degradation.
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