| 摘要 |
PURPOSE:To maintain a channel region at a high resistance level and simultaneously to reduce parasitic resistance by a method wherein an insulating film, similar in geometry to a silicon thin film forming the channel region and in contact with its upper surface, a gate insulating film coating a source region and a drain region, and a gate electrode built on the gate insulating film, are provided. CONSTITUTION:A thin-film source region 102 and a drain region 103 are formed on an insulating substrate 101. In contact with the upper side of the edge of the source region 102 and with that of the drain region 103, and connecting the two, a silicon thin-film channel region 104 and an insulating film 105, built for example of SiO2, SiNx, or SiON, are provided. A source electrode 106, built of a metal, transparent conductive film, or the like, is in contact with the source region 102 and, similarly, a drain electrode 107 is in contact with the drain region 103. The entirely is covered by a gate insulating film 108 built for example of SiO2, SiNx, or SiON. The gate insulating film 108 is mounted with a gate electrode 109. This design reduces the parasitic resistance Rs. |
