| 摘要 |
PURPOSE:To realize the high density by a method wherein two wiring parts arranged in the gate-width direction can be arranged in individual drain regions in at least one part of drain regions of a group of transistors so that the interval between the wiring parts connected to the drain region can be narrowed. CONSTITUTION:At individual drain electrodes 801-80n, 901-90n for a first and a second MOSFET rows 101, 102 the gate width is widened and two metal wiring parts are arranged on the widened part; a contact hole is connected to only either of the two metal wiring parts. If the individual drain electrodes for the first and the second MOSFET rows 101, 102 are made, in the gate-width direction, to correspond to the two metal wiring parts arranged in the gate- length direction, the number of unused MOSFET's is reduced; the area length of the metal wiring parts is reduced; the high density is realized. |
