| 摘要 |
PURPOSE:To oxidize a scum generated on a wafer and to remove it by a method wherein an oxidative gas is introduced into a chamber in which the wafer containing a resist pattern and the scum is put. CONSTITUTION:A wafer 6 where a resist pattern and a scum are generated is put in an airtight chamber 5; oxygen gas is introduced through an oxidative- gas inlet 7. A high-pressure mercury lamp 11 is turned on; the wafer 6 is irradiated with extreme ultraviolet rays. The oxygen gas is excited by the extreme ultraviolet rays and is transformed into ozone gas; this gas oxidizes the surface of a resist on the wafer and slightly removes it. Then, the oxygen gas and the ozone gas are removed through an outlet 9 by vacuum evacuation; nitrogen gas is introduced through an inactive-gas inlet 8; the surface of the resist is irradiated with the extreme ultraviolet rays in a nitrogen atmosphere; the resist is photoset. Accordingly, two processes for removing the scum and for photosetting can be executed in an identical system; it is not required to install a system for removal of the scum separately. |
