| 摘要 |
PURPOSE:To confine effectively emitted lights and obtain a semiconductor light emitting element as well as a semiconductor laser which have an improved light emitting power level by preparing a protruding part that rises vertically on a substrate, thereby forming electrodes on the side plane of the protruding part and on a plane that is extending in parallel with the substrate from a lower part of the protruding part. CONSTITUTION:Almost a cylindrical protruding part 121 is formed in the vertical direction to a substrate at an upper clad layer 104 consisting of the second conductivity type semiconductor layer and an upper reflecting mirror 111 that plays arole of the reflecting mirror to a light moving up and down inside an element is formed at the top of the protruding part. An electrically insulating layer 110 is laminated at a plane that is substantially in parallel with the substrate 101 from a lower part of the protruding part 121 and a P-side electrode 106 is formed at an upper part of the electrically insulating layer 110 as well as at the side pane of the protruding part 121 and then an N-side electrode 107 is formed at the rear of the substrate 101. When this device causes an electric current to flow between the above two electrodes, a light emitting at an emitting layer is confined in the horizontal direction to the substrate and it improves the emitting efficiency. In this way, a light power generated at a light emitting region is taken out as an improved light emitting power in the vertical direction to the substrate. |
