LIGHT EMITTING ELEMENT OF GALLIUM NITRIDE COMPOUND SEMICONDUCTOR

摘要

PURPOSE:To form I-layer and N-layer electrodes at a plane of the same side by pattern-forming of a silicon dioxide thin film at a principal plane of an N-layer of an N-type gallium nitride compound semiconductor, thereby causing an I-type gallium nitride compound semiconductor to grow selectively with the above silicon dioxide then film as a mask. CONSTITUTION:An I-type gallium nitride compound semiconductor performs a vapor growth at a principal plane of an N-layer 31 with a silicon dioxide thin film 32 as a mask. A single crystal I-type gallium nitride compound semiconductor 33 grows at a part which is not masked by the silicon dioxide, that is, at a part where the N-layer is exposed, while a single crystal does not grow on the silicon dioxide thin film 32 but a poly-crystal or amorphous phase grows. Such a layer 34 exhibits conductivity larger than that of the I-layer. In only the silicon thin film 32 is formed thin enough to have conductivity, its conductivity layer is used as a lead for the N-layer and then I and N-layer electrodes are easily formed at the same plane.