Method and apparatus for producing a single crystal

摘要

In the Czochralski method of growing single crystals of high-purity silicon, a magnetic field which travels downwards is applied to the silicon melt in the melting crucible and a topping-up amount of polycrystalline silicon is introduced into the melt to compensate for the decrease in the volume of the melt in the melting crucible due to the growth of the single crystal. The purpose of the magnetic field is to keep the doping concentration in the melt at a constant level. Compared with the prior-art method in which no travelling magnetic field is applied, the silicon single crystal produced by the method according to the invention is advantageous in relation to the substantially smaller variation in the resistivity in the plane of wafers produced by cutting up the single-crystal body.