发明名称 APD BIAS CIRCUIT
摘要 PURPOSE:To obtain excellent SNR characteristics extending over a wide temperature range by using a Wheatstone bridge circuit by a thermistor as a temperature compensation circuit in an avalanche photodiode (APD) bias method. CONSTITUTION:An output from a Wheatstone bridge consisting of resistors 14, 15, 16 and a thermistor 13 is input to a voltage adding circuit section 9 through a differential buffer amplifier 12 in a temperature compensation voltage generating circuit section 11, and the voltage is added to the output voltage from a constant-voltage generating circuit section 10. An output from the voltage adding circuit 9 is applied to a high-voltage generating circuit 7 as control voltage. Accordingly, the multiplication factor of an APD can be controlled optimally extending over a wide temperature range by a simple circuit, and a large effect is displayed when a photo-receiver is operated at a position where an ambient temperature remarkably changes.
申请公布号 JPS63187672(A) 申请公布日期 1988.08.03
申请号 JP19870018288 申请日期 1987.01.30
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 SHUDO KOICHI;YONEDA ETSUGO
分类号 H01L31/10;G01D3/028;H04B10/00;H04B10/07;H04B10/293;H04B10/564;H04B10/572 主分类号 H01L31/10
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