| 摘要 |
PURPOSE:To form a preferable alignment mark for electron beam exposure by removing by etching part of a semiconductor substrate through a second opening on the substrate. CONSTITUTION:An active layer 2, a thin film 3 and a resist film 4 are sequentially laminated on a semiconductor substrate 1. A first opening 5 and a second opening 6 are formed in the film 4. The opening 6 is formed at one position corresponding to the part not provided with the active layer 2 of the film 4. An ohmic electrode metal film 7-1 and an alignment mark metal film 7-2 are formed through the openings 5, 6. The substrate 1 is covered with a resist film 8, and a third opening 9 which includes the film 7-2 is formed. The film 7-2 is removed by etching, with the film 3 as a mask the exposed surface of the substrate 1 is etched to form a recess alignment mark 10. The film 3 is separated to form an ohmic electrode 11. With the mark 10 as a target a gate electrode 12 is formed by positioning it.
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