METHOD AND APPARATUS FOR MEASURING BY INFRARED ABSORPTION THE CONCENTRATION OF MICROCRYSTAL DEFECTS IN A SILICON WAFER USED IN THE MANUFACTURE OF A SEMICONDUCTOR ELEMENT

摘要

In a method for predicting a density of micro crystal defects to be generated in a semiconductor element, an infrared absorption spectrum associated with a silicon wafer (30), which is used for the manufacture of the semiconductor element, is formed by a spectrum forming system (10, 18, 22, 34). The spectrum has a first oxygen absorption peak at the wavenumber range of 1150 to 1050 cm<-><1> and a second oxygen absorption peak at 530 to 500 cm<-><1>. First and second coefficients indicating oxygen concentrations at the first and second peaks are read by a reading unit (12). The density of the micro crystal defects are predicted by using a ratio of the first and second coefficients as a monitor.