| 摘要 |
PURPOSE:To extract beams from a light-emitting layer effectively by concentrically arranging etched trenches to the surface of a semiconductor crystal and reducing the trench width and intervals of concentric circles with separation from the center of the concentric circles. CONSTITUTION:An N-type Ga(1-x)AlxAs optical confinement layer 2 (0<x<=1), an N-type or P-type Ga(1-y)AlyAs (y<x) light-emitting layer 3, a P-type Ga(1-x) AlxAs optical confinement layer 4 and an N-type GaAs cap layer 5 are laminated continuously onto an N-type GaAs substrate. An electrode-easy layer 6 used as the mask of an SiO2 film being formed onto the cap layer 5 and having an opening section in predetermined width and through Zn diffusion in depth reaching to one part of the optical confinement layer 4 is shaped. Etched trenches 7 having prescribed depth and width are formed to the surface of the optical confinement layer 2 so that the trench width and the repeating intervals are reduced toward the radial direction of concentric circles. Each of electrodes 8 is shaped onto the surface of the optical confinement layer 2, thus completing an optical semiconductor device. |
