| 摘要 |
PURPOSE:To decrease manufacturing processes by forming one electrode for a semiconductor photo detector and the base body region of a switching transistor by semiconductor layers having the same crystal structure. CONSTITUTION:A semiconductor photo detector 34 and a switching transistor 3 corresponding to the semiconductor photo detector 34 are shaped onto an insulating substrate 1. In the photo detector having such constitution, one electrode 35 for the semiconductor photo detector 34 and the base body region of the switching transistor 3 are formed by semiconductor layers having the same crystal structure. Consequently, one electrode 35 of the semiconductor photo detector 34 and the base body region 11 of the switching transistor 3 can be shaped through the same process. Accordingly, manufacturing processes can be shortened. |
